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NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp
Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant-current transistors on a common monolithic substrate. The six NPN transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise an a value of fT in excess of 300MHz. These features make the NTE917 useful from DC to 120MHz. Bias and load resistors have been omitted to provide maximum application flexibility. The monolithic construction of the NTE917 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual-channel applications where matched performance of the two channels is required. The NTE917 is supplied in a 14-Lead DIP type plastic package with a limited temperature range. The availability of extra pins allows the introduction of an independent substrate connection for maximum flexibility. Features: D Two Different Amplifiers on a Common Substrate D Independently Accessible Inputs and Outputs D Maximum Input Offset Voltage: 5mV D Limited Temperature Range: -0 to +85C Applications: D Dual Sense Amplifiers D Dual Schmitt Triggers D Multifunction Combinations - RF/Mixer/Oscillator; Converter/IF D IF Amplifiers (Differential and/or Cascode) D Product Detectors D Doubly Balanced Modulators and Demodulators D Balanced Quadrature Detectors D Cascade Limiters D Synchronous Detectors D Pairs of Balanced Mixers D Synthesizer Mixers D Balanced (Push-Pull) Cascode Amplifiers
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation, PD Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derat Above +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec max), TL . . . . . . . . . . . +265C The following ratings apply for each transistor in the device: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide for normal transistor action. The substrate should be maintained at signal (AC) GND by means of a suitable grounding capacitor, to avoid undesired coupling between transistors.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristics For Each Differential Amplifier Input Offset Voltage Input Offset Current Input Bias Current Quiescent Operating Current Ratio Temperature Coefficient Magnitude of Input Offset Voltage For Each Transistor DC Forward Base-Emitter Voltage IC(Q1) IC(Q2) VIO IIO II
or
Symbol
Test Conditions
Min
Typ
Max
Unit
VCB = 3V, IE(Q3) = IE(Q4) = 2mA
- - -
0.45 0.3 10
5.0 2.0 24
mV A A
IC(Q5) IC(Q6)
0.98 to 1.02 (Typ) - 1.1 - V/C
VIO T VBE VCB = 3V IC = 50A IC = 1mA IC = 3mA IC = 10mA
- - - - - - 15 20 20 5
0.630 0.715 0.750 0.800 -1.9 0.002 24 60 60 7
0.70 0.80 0.85 0.90 - 100 - - - -
V V V V V/C nA V V V V
Temperature Coefficient of Base-Emitter Voltage Collector Cutoff Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Substrate Breakdown Voltage Emitter-Base Breakdown Voltage
VBE T ICBO V(BR)CEO V(BR)CBO V(BR)CIO V(BR)EBO
VCB = 3V, IC = 1mA VCB = 10V, IE = 0 IC = 1mA, IB = 0 IC = 10A, IE = 0 IC = 10A, ICI = 0 IE = 10A, IC = 0
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Dynamic Characteristics Common-Mode Rejection Ratio for Each Amplifier AGC Range, One Stage Voltage Gain, Single Stage Double-Ended Output AGC Range, Two Stage Voltage Gain, Two Stage Double-Ended Output Low-Frequency, Small-Signal Equivalent-Circuit Characteristics (For Single Transistor) Forward Current-Transfer Ratio Short-Circuit Input Impedance Open-Circuit Output Impedance Open-Circuit Reverse Voltage Transfer Ratio 1/f Noise Figure (For Single Transistor) Gain-Bandwidth Product (For Single Transistor) Admittance Characteristics; Differential Circuit Configuration: (For Each Amplifier) Forward Transfer Admittance Input Admittance Output Admittance Reverse Transfer Admittance Admittance Characteristics; Cascode Circuit Configuration: (For Each Amplifier) Forward Transfer Admittance Input Admittance Output Admittance Reverse Transfer Admittance Noise Figure y21 y11 y22 y12 NF f = 100MHz - VCB = 3V Total Stage IC 2.5mA, f = 1MHz 2 5mA 68-j0 (Typ) 0.55+j0 (Typ) 0+j0.02 (Typ) 0.004-j0.005 (Typ) 8 - mmho mmho mmho mho dB y21 y11 y22 y12 VCB = 3V Each Collector IC 1.25mA, f = 1MHz 1 25mA -20+j0 (Typ) 0.22+j0.1 (Typ) 0.01+j0 (Typ) -0.003+j0 (Typ) mmho mmho mmho mmho hfe hie hoe hre NF fT f = 1kHz, VCE = 3V VCE = 3V, IC = 3mA f = 1kHz, VCE = 3V, IC = 1mA - - - 110 3.5 15.6 - - - k mho CMRR AGC A AGC A VCC = 12V, VEE = -6V, Vx = -3.3V, f = 1kHz - - - - - 100 75 32 105 60 - - - - - dB dB dB dB dB Symbol Test Conditions Min Typ Max Unit
1.8 x 10-4 (Typ) - - 3.25 550 - - dB MHz
Pin Connection Diagram
Collector Q2 1 Base Q2 2 Base Q3 3 Emitter Q3 4 Substrate 5 Base Q5 6 Collector Q5 7
14 Collector Q1 13 Base Q1 12 Emitter Q4 11 Base Q4 10 N.C. 9 Base Q6 8 Collector Q6
14
8
1
7
.785 (19.95) Max .200 (5.08) Max
.300 (7.62)
.100 (2.45) .600 (15.24)
.099 (2.5) Min

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